? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. MMBD7000 switching switching switching switching diode diode diode diode _PO features c characteristic ? symbol ? max ? unit power dissipation ? p d (ta=25 ) 225 mw forward current i f 200 ma reverse voltage ? v r 10 0 v junction and storage temperature Y???? t j , t stg - 5 5to+150 device device device device marking marking marking marking MMBD7000 MMBD7000 MMBD7000 MMBD7000 = = = = m5c m5c m5c m5c electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t (t (t (t a a a a = = = = 25 25 25 25 unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted o ? ?? 25 ) ) ) ) characteristic ? symbol ? min ? max ? unit reverse breakdown voltage ? (i r =100ua) v (br) 10 0 v reverse leakage current ? (v r = 5 0 v) (v r = 10 0 v) i r 1 3 ua forward voltage(test condition) ? i f =1ma i f =10ma i f = 10 0ma v f 550 670 75 0 7 00 8 20 1 1 00 mv diode capacitance Ow (v r =0v, f=1mhz) c d 1.5 pf reverse recovery time ??rg t rr 4 ns sot-23 ??
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. MMBD7000 dimension dimension dimension dimension b? (unit) mm
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